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1 CGHV27100 100 w, 2500-2700 mhz, 50 v, gan hemt for lte crees CGHV27100 is a gallium nitride (gan) high electron mobility transistor (hemt) is designed specifcally for high effciency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 - 2.7 ghz lte, 4g telecom and bwa amplifer applications. the transistor is input matched and supplied in a ceramic/ metal pill and fange packages. package type: 440162 and 440161 pn: CGHV27100f and CGHV27100p re v 1.0 C ma y 2015 features ? 2.5 - 2.7 ghz operation ? 18.0 db gain ? -37 dbc aclr at 25 w p ave ? 33 % effciency at 25 w p ave ? high degree of dpd correction can be applied typical performance over 2.5 - 2.7 ghz (t c = 25?c) of demonstration amplifer parameter 2.5 ghz 2.6 ghz 2.7 ghz units gain @ 44 dbm 18.1 18.0 17.9 db aclr @ 44 dbm -37.0 -37.0 -37.0 dbc drain effciency @ 44 dbm 34.0 33.5 32.0 % note: measured in the CGHV27100-amp amplifer circuit, under wcdma 3gpp test model 1, 64 dpch, 45% clipping, par = 7.5 db @ 0.01% probability on ccdf, v dd = 50 v, i ds = 500 ma. subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c case temperature parameter symbol rating units conditions drain-source voltage v dss 125 volts 25?c gate-to-source voltage v gs -10, +2 volts 25?c storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 16 ma 25?c maximum drain current 1 i dmax 6 a 25?c soldering temperature 2 t s 245 ?c screw torque 80 in-oz thermal resistance, junction to case 3 r jc 2.34 ?c/w 85?c, p diss = 48 w thermal resistance, junction to case 4 r jc 2.95 ?c/w 85?c, p diss = 48 w case operating temperature 5 t c -40, +150 ?c note: 1 current limit for long term, reliable operation. 2 refer to the application note on soldering at http://www.cree.com/rf/document-library 3 measured for the CGHV27100p 4 measured for the CGHV27100f 5 see also, the power dissipation de-rating curve on page 5. electrical characteristics (t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold voltage v gs(th) -3.8 -3.0 -2.3 v dc v ds = 10 v, i d = 16 ma gate quiescent voltage v gs(q) C -2.7 C v dc v ds = 50 v, i d = 500 ma saturated drain current 2 i ds 12 14.4 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v br 150 C C v dc v gs = -8 v, i d = 16 ma rf characteristics 5 (t c = 25 ? c, f 0 = 2.7 ghz unless otherwise noted) saturated output power 3,4 p sat C 135 C w v dd = 50 v, i dq = 500 ma pulsed drain effciency 3,4 C 68 C % v dd = 50 v, i dq = 500 ma, p out = p sat gain 6 g C 18 C db v dd = 50 v, i dq = 500 ma, p out = 44 dbm wcdma linearity 6 aclr C -37 C dbc v dd = 50 v, i dq = 500 ma, p out = 44 dbm drain effciency 6 C 33 C % v dd = 50 v, i dq = 500 ma, p out = 44 dbm output mismatch stress 3 vswr C C 10 : 1 y no damage at all phase angles, v dd = 50 v, i dq = 500 ma, p out = 100 w pulsed dynamic characteristics input capacitance 7 c gs C 66 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz output capacitance 7 c ds C 8.7 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 0.47 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz notes: 1 measured on wafer prior to packaging. 2 scaled from pcm data. 3 pulse width = 100 s, duty cycle = 10% 4 p sat is defned as i gs = 1.6 ma peak 5 measured in CGHV27100-amp 6 single carrier wcdma, 3gpp test model 1, 64 dpch, 45% clipping, par = 7.5 db @ 0.01% probability on ccdf, v dd = 50 v. 7 includes package and internal matching components. CGHV27100 rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
3 typical performance figure 1. - small signal gain and return losses vs frequency for the CGHV27100 measured in CGHV27100-amp amplifer circuit v dd = 50 v, i dq = 0.5 a typical linear performance figure 2. - typical gain, drain effciency and aclr vs output power of the CGHV27100 measured in CGHV27100-amp amplifer circuit v ds = 50 v, i ds = 0.5 a, 1c wcdma, par = 7.5 db 0 5 10 15 20 25 m ag n i t u d e ( d b ) -20 -15 -10 -5 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 m ag n i t u d e ( d b ) frequency (ghz) s11 s21 s22 20 25 30 35 40 45 50 - 30 -25 -20 -15 -10 -5 0 d r ai n ef f i ci en cy ( % ) & gai n ( d b ) a c l r ( d b c) 2.5ghz acpr 2.6ghz acpr 2.7ghz acpr 2.5ghz drain efficiency 2.6ghz drain efficiency 2.7ghz drain efficiency 2.5ghz gain 2.6ghz gain 2.7ghz gain 0 5 10 15 20 -50 -45 -40 -35 - 30 28 30 32 34 36 38 40 42 44 46 48 d r ai n ef f i ci en cy ( % ) & gai n ( d b ) output power (dbm) CGHV27100 rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
4 typical performance figure 3. - typical gain, drain effciency and aclr vs frequency of the CGHV27100 measured in CGHV27100-amp amplifer circuit. v ds = 50 v, i ds = 0.5 a, p ave = 25 w, 1c wcdma, par = 7.5 db figure 4. - typical two tone linearity vs output power of the CGHV27100 measured in CGHV27100-amp1 amplifer circuit. v ds = 50 v, i ds = 0.5 a - 36 -35 -34 -33 -32 -31 -30 20 25 30 35 40 45 50 a c l r ( d b c) gai n ( d b ) & d r ai n ef f i ci en cy ( % ) -40 -39 -38 -37 - 36 0 5 10 15 20 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 gai n ( d b ) & d r ai n ef f i ci en cy ( % ) frequency (ghz) gain drain efficiency aclr -40 -30 -20 -10 0 i n t er mo d u l ati o n d i sto r t i o n ( d b c) CGHV27100f imd sweep -80 -70 -60 -50 20 25 30 35 40 45 i n t er mo d u l ati o n d i sto r t i o n ( d b c) output power (dbm) -imd3 +imd3 -imd5 +imd5 -imd7 +imd7 CGHV27100 rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
5 typical performance figure 5. - power dissipation derating curve note 1. area exceeds maximum case operating temperature (see page 2). source and load impedances frequency (mhz) z source z load 2500 4.01 - j3.88 10.69 - j2.86 2600 3.99 - j3.29 11.16 - j3.17 2700 4.01 - j2.72 11.67 - j3.94 note 1 : v dd = 50 v, i dq = 500 ma. in the 440162 package. note 2 : impedances are extracted from CGHV27100-amp demonstration circuit and are not source and load pull data derived from transistor. d z source z load g s note 1 CGHV27100 rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
6 CGHV27100-amp demonstration amplifer circuit bill of materials designator description qty r1, r2 res, 10 ohm, +/- 1%, 1/16 w, 0603 2 c1 cap, 5.6 pf, +/- 0.25 pf, 0603, atc 1 c2 cap, 27 pf, +/-5%, 0603, atc 1 c3 cap, 10.0 pf, +/-5%, 0603, atc 1 c8, c13 cap, 8.2 pf, +/-0.25 pf, 0603, atc 2 c4, c9, c14 cap, 470 pf, 5%, 100 v, 0603, x 3 c5, c10, c15 cap, 33000 pf, 0805, 100 v, x7r 3 c6 cap, 10 uf, 16 v, tantalum 1 c7 cap, 27 pf, +/-5%, 250 v, 0805, atc 600 f 1 c11, c16 cap, 1.0 uf, 100 v, 10%, x7r, 1210 2 c12 cap, 100 uf, +/-20%, 160 v, electrolytic 1 c17 cap, 33 uf, 20%, electrolytic 1 j1, j2 conn, sma 2 j3 header rt>plz.1cen lk 9pos 1 pcb, ro4350, 0.020 thk, CGHV27100f 1 2-56 soc hd screw 1/4 ss 4 #2 split lockwasher ss 4 CGHV27100f 1 CGHV27100-amp demonstration amplifer circuit electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a > 250 v jedec jesd22 a114-d charge device model cdm 1 < 200 v jedec jesd22 c101-c CGHV27100 rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
7 CGHV27100-amp demonstration amplifer circuit schematic CGHV27100-amp demonstration amplifer circuit outline c2 27 pf c3 10 pf c5 0.033 c6 10 c8 8.2 pf c9 470 pf c12 100 c4 470 pf c7 27 pf c10 0.033 c11 1 1 2 3 r2 10 ohm c1 5.6 pf c13 8.2 pf c14 470 pf c15 0.033 c17 33 c16 1 r1 10 ohm 1 2 3 4 5 6 7 8 9 j3 j1 j2 vd=+50v gnd vg=-2.0v to -3.5v typ CGHV27100 rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
8 product dimensions CGHV27100f (package type 440162) product dimensions CGHV27100p (package type 440161) CGHV27100 rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
9 part number system parameter value units upper frequency 1 2.7 ghz power output 100 w package flange - table 1. note 1 : alpha characters used in frequency code indicate a value greater than 9.9 ghz. see table 2 for value. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. package power output (w) upper frequency (ghz) cree gan high voltage CGHV27100f CGHV27100 rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
10 product ordering information order number description unit of measure image CGHV27100f gan hemt each CGHV27100p gan hemt each CGHV27100-tb test board without gan hemt each CGHV27100f-amp test board with gan hemt installed each CGHV27100 rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
11 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or dir ect operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing cree, rf components 1.919.407.5302 ryan baker marketing & sales cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 CGHV27100 rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.

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